参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO60 V
ConfigurationDual
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Width0.8 mm
Length1 mm
KRHTS8541219000
Height0.37 mm
Package / CaseSOT-963-6
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SeriesNST3904DP6
MXHTS85412101
TARIC8541210000
Mounting StyleSMD/SMT
BrandON Semiconductor
CNHTS8541210000
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageON Semiconductor NST3904DP6T5G
DescriptionBipolar Transistors - BJT LESHAN DUAL NPN
Factory Pack Quantity8000
SubcategoryTransistors
RoHS Details
USHTS8541210095
Pd - Power Dissipation420 mW