参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 500 mA, 1 V
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO32 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max20 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min160 at 500 mA, 1 V
QualificationAEC-Q101
Mounting StyleSMD/SMT
Length6.7 mm
Width3.7 mm
Height1.7 mm
MXHTS85412999
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia BCP69-25,115
KRHTS8541299000
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Package / CaseSOT-223-3
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
Unit Weight0.003951 oz
RoHS Details
Pd - Power Dissipation1400 mW
DescriptionBipolar Transistors - BJT TRANS MED PWR TAPE-7
BrandNexperia
Part # Aliases933969390115
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541290075