PMV65UNER

厂牌:Nexperia(安世)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000051757160
描述:场效应管(MOSFET) 490mW 20V 2.8A 1个N沟道
最新价格近期成交25单+
数量价格(含税)
1¥0.7244
200¥0.4999
1500¥0.4544
3000¥0.4245
库存:2,643交期:3-5Days起订:1增量:1
数量:
X
0.7244(单价)
合计:
¥0.72
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage450 mV
TechnologySi
Id - Continuous Drain Current3.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance63 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge6 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandNexperia
CNHTS8541210000
ManufacturerNexperia
Product CategoryMOSFET
TARIC8541210000
Product TypeMOSFET
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time12 ns
ImageNexperia PMV65UNER
SubcategoryMOSFETs
Unit Weight0.000282 oz
USHTS8541290095
Part # Aliases934068853215
Pd - Power Dissipation6.25 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time23 ns