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MJD31C-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000051764064
描述：Trans GP BJT NPN 100V 3A 3900mW 3-Pin(2+Tab) TO-252 T/R
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max40 at 3 A, 4 V
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min25
Width6.2 mm
Height2.4 mm
Length6.8 mm
MXHTS85412101
KRHTS8541219000
Package / CaseDPAK-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.012346 oz
SeriesMJD31C
BrandDiodes Incorporated
ImageDiodes Incorporated MJD31C-13
ManufacturerDiodes Incorporated
Pd - Power Dissipation1560 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 100V 5A NPN SMT