参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current17 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge44 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingTube
TARIC8541290000
ImageSTMicroelectronics STF24NM60N
Unit Weight0.011640 oz
SeriesSTF24NM60N
Factory Pack Quantity1000
Pd - Power Dissipation30 W
BrandSTMicroelectronics
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-ch 600 V 0.168 Ohm 17 A MDmesh
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel