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FMMT6520TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000051764102
描述：TRANSISTOR PNP HV 350V SOT23-3
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max20 at 1 mA, 10 V
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO350 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max350 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 1 V
Height1 mm
DC Collector/Base Gain hfe Min20 at 1 mA, 10 V, 30 at 10 mA, 10 V, 30 at 30 mA, 10 V, 20 at 50 mA, 10 V, 15 at 100 mA, 10 V
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
SubcategoryTransistors
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated FMMT6520TA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
SeriesFMMT65
ManufacturerDiodes Incorporated
USHTS8541290095
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP High Voltage
Pd - Power Dissipation330 mW