参数项参数值
参数项参数值
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage300 mV
DC Collector/Base Gain hfe Min35 at 100 mA, 10 VDC
MXHTS85412101
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-416-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageON Semiconductor NSVMMBT2222ATT1G
RoHS Details
SeriesMMBT2222AT
SubcategoryTransistors
BrandON Semiconductor
Factory Pack Quantity3000
Unit Weight0.000212 oz
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT SS SC75 GP XSTR NPN 75V
USHTS8541210095
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)