参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 25 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 20 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
MXHTS85412101
Emitter- Base Voltage VEBO- 5 V
Length6.5 mm
Width3.5 mm
KRHTS8541219000
Height1.6 mm
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min50 at - 5 mA, - 10 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-223-4
CAHTS8541210000
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
ImageDiodes Incorporated DCP69-13
PackagingReel
PackagingMouseReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT 1W -20V
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesDCP69
SubcategoryTransistors
ManufacturerDiodes Incorporated
Unit Weight0.003951 oz
USHTS8541210095
Pd - Power Dissipation1000 mW