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SI3932DV-T1-GE3
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051887352
描述：MOSFET N-CH 30V 6-TSOP
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min10 s
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Rds On - Drain-Source Resistance58 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time10 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time10 ns
Package / CaseTSOP-6
SeriesSI3
MXHTS85412101
Factory Pack Quantity3000
Product CategoryMOSFET
SubcategoryMOSFETs
Qg - Gate Charge6 nC
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
CNHTS8541290000
BrandVishay Semiconductors
TARIC8541290000
Minimum Operating Temperature- 55 C
ManufacturerVishay
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingMouseReel
PackagingCut Tape
PackagingReel
Product TypeMOSFET
Fall Time10 ns
RoHS Details
DescriptionMOSFET 30V Vds 20V Vgs TSOP-6
ImageVishay Semiconductors SI3932DV-T1-GE3
Unit Weight0.000705 oz
USHTS8541290095
Part # AliasesSI3932DV-GE3
Pd - Power Dissipation1.4 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)