参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
ConfigurationSingle
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current6 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Height4.83 mm
KRHTS8541299000
MXHTS85412999
Collector-Emitter Saturation Voltage1.5 V
DC Collector/Base Gain hfe Min30
Factory Pack Quantity800
Length10.29 mm
Width9.65 mm
JPHTS8541290100
Minimum Operating Temperature- 65 C
CNHTS8541290000
CAHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageON Semiconductor MJB41CT4G
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
RoHS Details
SeriesMJB41C
DescriptionBipolar Transistors - BJT 6A 100V 65W NPN
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541290095
Unit Weight0.424663 oz
Pd - Power Dissipation65 W