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STD2HNK60Z-1
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051897082
描述：MOSFET N-CH 600V 2A IPAK EMEA; EMEA;
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.75 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Height6.2 mm
Length6.6 mm
Vgs - Gate-Source Voltage- 30 V, + 30 V
ManufacturerSTMicroelectronics
KRHTS8541299000
PackagingTube
Typical Turn-On Delay Time10 ns
Factory Pack Quantity3000
BrandSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
Rds On - Drain-Source Resistance4.8 Ohms
Maximum Operating Temperature+ 150 C
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Package / CaseTO-251-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541210000
RoHS Details
Product TypeMOSFET
Width2.4 mm
Mounting StyleThrough Hole
ImageSTMicroelectronics STD2HNK60Z-1
Qg - Gate Charge11 nC
DescriptionMOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A
MXHTS85412101
Product CategoryMOSFET
SeriesSTD2HNK60Z-1
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.014110 oz
Fall Time50 ns
CNHTS8541290000
Pd - Power Dissipation45 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time30 ns