参数项参数值
参数项参数值
Forward Transconductance - Min22 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance21 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time23 ns
Width3.9 mm
Height1.75 mm
Qg - Gate Charge11 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time3 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesFDS8949
BrandON Semiconductor / Fairchild
Unit Weight0.006596 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDS8949
Product CategoryMOSFET
Pd - Power Dissipation2 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage40 V
DescriptionMOSFET 40V 6A 29OHM DUAL NCH LOGIC
TradenamePowerTrench
Number of Channels2 Channel
Rise Time5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)