参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 4 A
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.135 V
DC Collector/Base Gain hfe Min250 at - 10 mA, - 2 V
MXHTS85412101
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingReel
TARIC8541210000
PackagingMouseReel
PackagingCut Tape
ImageON Semiconductor NSV40200LT1G
RoHS Details
SeriesNSS40200L
SubcategoryTransistors
BrandON Semiconductor
Factory Pack Quantity3000
Unit Weight0.000282 oz
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT LESHANBE (CN1) XTR
USHTS8541210095
Pd - Power Dissipation710 mW