STD6N60M2

STD6N60M2

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051901244

描述：Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current4.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 25 V, + 25 V

Typical Turn-On Delay Time9.5 ns

Rds On - Drain-Source Resistance1.06 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time24 ns

MXHTS85412999

Qg - Gate Charge8 nC

KRHTS8541299000

Package / CaseTO-252-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

CNHTS8541210000

Fall Time22.5 ns

PackagingMouseReel

PackagingReel

PackagingCut Tape

TARIC8541290000

Unit Weight0.139332 oz

ImageSTMicroelectronics STD6N60M2

SeriesSTD6N60M2

BrandSTMicroelectronics

Factory Pack Quantity2500

Pd - Power Dissipation60 W

Product TypeMOSFET

ManufacturerSTMicroelectronics

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

Vds - Drain-Source Breakdown Voltage600 V

USHTS8541290095

TradenameMDmesh

Number of Channels1 Channel

Rise Time7.4 ns