参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2.1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current54.9 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height21.1 mm
Length16.13 mm
KRHTS8541299000
Typical Turn-On Delay Time45 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance77 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time200 ns
Package / CaseTO-247-3
Factory Pack Quantity240
BrandInfineon Technologies
ImageInfineon Technologies SPW55N80C3
TARIC8541290000
Width5.21 mm
Mounting StyleThrough Hole
PackagingTube
ManufacturerInfineon
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
SubcategoryMOSFETs
Qg - Gate Charge288 nC
DescriptionMOSFET N-Ch 850V 54.9A TO247-3
MXHTS85412999
Product TypeMOSFET
SeriesXPW55N80
USHTS8541290095
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time9 ns
CNHTS8541290000
Part # AliasesSPW55N8C3XK SP000849356 SPW55N80C3FKSA1
Pd - Power Dissipation500 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time21 ns