参数项参数值
参数项参数值
Forward Transconductance - Min5.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current3.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance50 MOhms
Width1.2 mm
Height0.55 mm
Length1.6 mm
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Unit Weight0.000106 oz
ImageToshiba SSM6J214FE(TE85L,F
SeriesSSM6J214FE
BrandToshiba
Factory Pack Quantity4000
Pd - Power Dissipation700 mW
Product TypeMOSFET
ManufacturerToshiba
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V
Vds - Drain-Source Breakdown Voltage30 V
TradenameU-MOSVI
Number of Channels1 Channel