参数项参数值
参数项参数值
Forward Transconductance - Min7.5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1.2 V
TechnologySi
Id - Continuous Drain Current2.4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
QualificationAEC-Q101
Typical Turn-On Delay Time7.5 ns
MXHTS85412101
Rds On - Drain-Source Resistance85 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time30.2 ns
KRHTS8541219000
Qg - Gate Charge7.5 nC
Package / CaseSOT-23-3
CNHTS8541210000
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time21 ns
ImageON Semiconductor NTRV4101PT1G
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesNTR4101P
Unit Weight0.000282 oz
ManufacturerON Semiconductor
BrandON Semiconductor
DescriptionMOSFET PFET 20V 3.2A 85MO
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation0.73 W
SubcategoryMOSFETs
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time12.6 ns