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FDD86110
厂牌：安森美(onsemi)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051909237
描述：Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current12.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance10.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge35 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time3.9 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFDD86110
BrandON Semiconductor / Fairchild
Unit Weight0.009184 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDD86110
Product CategoryMOSFET
Pd - Power Dissipation3.1 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET 100V N-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time5.4 ns
Moisture Sensitivity Level1 (Unlimited)