参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current670 mA, - 530 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Width1.2 mm
Height0.6 mm
MXHTS85412101
Length1.6 mm
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance400 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Minimum Operating Temperature- 65 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-563-6
PackagingMouseReel
PackagingCut Tape
PackagingReel
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMC2004VK-7
Factory Pack Quantity3000
SeriesDMC2004
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 400mW 20V
Channel ModeEnhancement
USHTS8541210095
Unit Weight0.000106 oz
Pd - Power Dissipation1 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel