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FQPF6N90C
厂牌：安森美(onsemi)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051909511
描述：Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Tube
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5.5 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time35 ns
Rds On - Drain-Source Resistance2.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
Height16.07 mm
Length10.36 mm
MXHTS85412999
Qg - Gate Charge40 nC
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight0.080072 oz
BrandON Semiconductor / Fairchild
SeriesFQPF6N90C
ImageON Semiconductor / Fairchild FQPF6N90C
Pd - Power Dissipation56 W
ManufacturerON Semiconductor
Product CategoryMOSFET
Part # AliasesFQPF6N90C_NL
SubcategoryMOSFETs
Factory Pack Quantity1000
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage900 V
DescriptionMOSFET 900V N-Ch Q-FET advance C-Series
TradenameQFET
Number of Channels1 Channel
Rise Time90 ns
TypeMOSFET