参数项参数值
参数项参数值
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO250 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max250 V
Continuous Collector Current8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Length10.53 mm
Width4.83 mm
Height15.75 mm
Collector-Emitter Saturation Voltage0.5 V
Minimum Operating Temperature- 65 C
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity50
PackagingTube
ImageON Semiconductor MJE15032G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
DescriptionBipolar Transistors - BJT 8A 250V 50W NPN
SeriesMJE15032
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.211644 oz
Pd - Power Dissipation50 W
Moisture Sensitivity LevelNot Applicable