参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 100 mA, 2 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
RoHS Details
Emitter- Base Voltage VEBO6 V
Length4.6 mm
Height1.6 mm
Factory Pack Quantity4000
QualificationAEC-Q101
BrandNexperia
KRHTS8541299000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
TARIC8541290000
Package / CaseSOT-89-3
Minimum Operating Temperature- 65 C
JPHTS8541290100
ManufacturerNexperia
DC Collector/Base Gain hfe Min300 at 100 mA, 2 V, 300 at 500 mA, 2 V, 270 at 1 A, 2 V, 230 at 2 A, 2 V, 180 at 3 A, 2 V
CAHTS8541290000
SubcategoryTransistors
Width2.6 mm
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
MXHTS85412999
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-11
USHTS8541290075
Unit Weight0.001411 oz
CNHTS8541290000
Part # Aliases934058036135
Pd - Power Dissipation1600 mW