参数项参数值
参数项参数值
DC Current Gain hFE Max240
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 0.2 A
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Length2.2 mm
Width1.35 mm
Height1 mm
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated MMDT5401-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT -150V 200mW
SeriesMMDT54
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW