参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated ZXTN25100DFHTA
TARIC8541290000
RoHS Details
SeriesZXTN25100
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.001093 oz
DescriptionBipolar Transistors - BJT NPN 100V HIGH GAIN
ManufacturerDiodes Incorporated
USHTS8541290075
Pd - Power Dissipation1810 mW