参数项参数值
参数项参数值
DC Current Gain hFE Max450 at - 50 mA, - 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 2 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 200 mV
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min180 at - 50 mA, - 2 V
Minimum Operating Temperature- 55 C
CAHTS8541290000
MXHTS85412999
Maximum Operating Temperature+ 150 C
KRHTS8541299000
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP -50V Vceo -2A Ic MPT3
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SAR553P5T100
TARIC8541290000
Unit Weight0.006295 oz
RoHS Details
Series2SxR
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Pd - Power Dissipation500 mW
Part # Aliases2SAR553P5
BrandROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)