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STB6NK60ZT4
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051927533
描述：MOSFET N-CH 600V 6A D2PAK EMEA; EMEA;
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47 ns
Length10.4 mm
Height4.6 mm
MXHTS85412101
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
BrandSTMicroelectronics
SeriesSTB6NK60Z
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Channel ModeEnhancement
TARIC8541210000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH
Fall Time19 ns
ImageSTMicroelectronics STB6NK60ZT4
Product TypeMOSFET
Unit Weight0.139332 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation110 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time14 ns
TypeMOSFET