参数项参数值
参数项参数值
DC Current Gain hFE Max630
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.8 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
Width3.93 mm
Height4.7 mm
Length4.7 mm
JPHTS8541210101
Maximum Operating Temperature+ 150 C
MXHTS85412101
KRHTS8541219000
BrandON Semiconductor / Fairchild
Mounting StyleThrough Hole
Package / CaseTO-92-3
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingBulk
Unit Weight0.007055 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation625 mW
DescriptionBipolar Transistors - BJT NPN 45V 800mA HFE/630
Part # AliasesBC33740BU_NL
ImageON Semiconductor / Fairchild BC33740BU
SeriesBC337
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
Moisture Sensitivity LevelNot Applicable