参数项参数值
参数项参数值
Id - Continuous Drain Current120 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Rds On - Drain-Source Resistance4 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time85 ns
Vgs - Gate-Source Voltage- 16 V, + 5 V
Typical Turn-On Delay Time21 ns
BrandInfineon Technologies
Qg - Gate Charge180 nC
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
TARIC8541290000
Factory Pack Quantity1000
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerInfineon
Product TypeMOSFET
Fall Time57 ns
DescriptionMOSFET MOSFET_(20V 40V)
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation136 W
Part # AliasesIPB120P04P4L-03 SP002325760
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time16 ns
Moisture Sensitivity Level1 (Unlimited)