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IPB107N20N3GATMA1
厂牌：Infineon Technologies
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051955660
描述：Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min71 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current88 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance10.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge65 nC
Package / CasePG-TO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time11 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.068654 oz
SeriesOptiMOS 3
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation300 W
BrandInfineon Technologies
Part # AliasesIPB107N20N3 G SP000676406
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage200 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time26 ns