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IPB100N04S4H2ATMA1
厂牌：Infineon Technologies
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051955715
描述：MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time18 ns
Width9.25 mm
Height4.4 mm
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
MXHTS85412999
Length10 mm
KRHTS8541299000
Qg - Gate Charge90 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon Technologies IPB100N04S4H2ATMA1
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
SeriesXPB100N04
Fall Time21 ns
BrandInfineon Technologies
Factory Pack Quantity1000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation115 W
Part # AliasesIPB100N04S4-H2 SP000711274
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time13 ns