IPB120N04S402ATMA1

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051955795

描述：Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current120 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time27 ns

Rds On - Drain-Source Resistance1.58 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Width9.25 mm

MXHTS85412999

Height4.4 mm

Length10 mm

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge134 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time30 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandInfineon Technologies

SeriesXPB120N04

RoHS Details

ImageInfineon Technologies IPB120N04S402ATMA1

Product CategoryMOSFET

Unit Weight0.067021 oz

SubcategoryMOSFETs

ManufacturerInfineon

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation158 W

Part # AliasesIPB120N04S4-02 SP000764726

USHTS8541290095

DescriptionMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time16 ns