IPB180N06S4H1ATMA2

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051956012

描述：MOSFET N-CH AEC-Q101 60V 180A TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175蚓; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)

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商品参数

参数项参数值

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current180 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage3 V

Rds On - Drain-Source Resistance1.7 mOhms

Transistor Type1 N-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time30 ns

Width9.25 mm

Height4.4 mm

CAHTS8541290000

Minimum Operating Temperature- 55 C

MXHTS85412999

Maximum Operating Temperature+ 175 C

Length10 mm

KRHTS8541299000

Qg - Gate Charge270 nC

Mounting StyleSMD/SMT

JPHTS8541290100

Package / CaseTO-263-7

Channel ModeEnhancement

CNHTS8541290000

Fall Time15 ns

PackagingCut Tape

PackagingReel

TARIC8541290000

Unit Weight0.056438 oz

RoHS Details

ImageInfineon Technologies IPB180N06S4H1ATMA2

SeriesIPB180N06

Factory Pack Quantity1000

Pd - Power Dissipation250 W

BrandInfineon Technologies

Product TypeMOSFET

SubcategoryMOSFETs

ManufacturerInfineon

Part # AliasesIPB180N06S4-H1 SP001028786

Product CategoryMOSFET

DescriptionMOSFET N-Ch 60V 180A D2PAK-6

Vds - Drain-Source Breakdown Voltage60 V

USHTS8541290095

Number of Channels1 Channel

Rise Time5 ns