参数项参数值
参数项参数值
DC Current Gain hFE Max630
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.8 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
Width3.93 mm
Length4.7 mm
Height4.7 mm
PackagingAmmo Pack
BrandON Semiconductor / Fairchild
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Package / CaseTO-92-3 Kinked Lead
Minimum Operating Temperature- 55 C
Unit Weight0.008466 oz
RoHS Details
Pd - Power Dissipation625 mW
SeriesBC337
Factory Pack Quantity2000
DescriptionBipolar Transistors - BJT NPN 45V 800mA HFE/250
Part # AliasesBC33716TA_NL
ImageON Semiconductor / Fairchild BC33716TA
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors