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IPB100N04S4H2ATMA1
厂牌：Infineon Technologies
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051956031
描述：MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Height4.4 mm
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Width9.25 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time18 ns
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Length10 mm
TARIC8541290000
ImageInfineon Technologies IPB100N04S4H2ATMA1
MXHTS85412999
KRHTS8541299000
DescriptionMOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
ManufacturerInfineon
CAHTS8541290000
Qg - Gate Charge90 nC
JPHTS8541290100
Package / CaseTO-263-3
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Channel ModeEnhancement
Factory Pack Quantity1000
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
SeriesXPB100N04
Fall Time21 ns
Product CategoryMOSFET
BrandInfineon Technologies
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation115 W
Part # AliasesIPB100N04S4-H2 SP000711274
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time13 ns