IPB180N04S4H0ATMA1

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051956474

描述：MOSFET AEC-Q101 N-CH 40V TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900發hm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175蚓; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

下载数据手册

商品参数

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current180 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2 V

Rds On - Drain-Source Resistance900 uOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time50 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width9.25 mm

Height4.4 mm

MXHTS85412999

QualificationAEC-Q101

Typical Turn-On Delay Time44 ns

Length10 mm

KRHTS8541299000

CNHTS8541290000

RoHS Details

Qg - Gate Charge225 nC

DescriptionMOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2

Package / CaseTO-263-7

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

JPHTS8541290100

Maximum Operating Temperature+ 175 C

BrandInfineon Technologies

Fall Time49 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageInfineon Technologies IPB180N04S4H0ATMA1

Product CategoryMOSFET

SeriesXPB180N04

Unit Weight0.054294 oz

SubcategoryMOSFETs

ManufacturerInfineon

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation250 W

Part # AliasesIPB180N04S4-H0 SP000711248

USHTS8541290095

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time24 ns