参数项参数值
参数项参数值
DC Current Gain hFE Max630
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.8 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
Width3.93 mm
Height4.7 mm
Mounting StyleThrough Hole
Length4.7 mm
JPHTS8541210101
Maximum Operating Temperature+ 150 C
MXHTS85412101
KRHTS8541219000
Minimum Operating Temperature- 55 C
CAHTS8541210000
Package / CaseTO-92-3 Kinked Lead
CNHTS8541210000
PackagingAmmo Pack
TARIC8541210000
Unit Weight0.009524 oz
Pd - Power Dissipation625 mW
RoHS Details
BrandON Semiconductor / Fairchild
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
ImageON Semiconductor / Fairchild BC33725TAR
SeriesBC337
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
Moisture Sensitivity LevelNot Applicable