IPB160N04S4H1ATMA1

厂牌:Infineon Technologies
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000051956548
描述:Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
最新价格近期成交39单+
数量价格(含税)
213¥15.0479
500¥13.5537
1000¥12.4865
10000¥11.0991
100000¥9.3301
库存:3,240交期:3-4 weeks起订:2增量:1
数量:
X
15.0479(单价)
合计:
¥30.10
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current160 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance1.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width9.25 mm
MXHTS85412999
Height4.4 mm
QualificationAEC-Q101
Typical Turn-On Delay Time28 ns
Length10 mm
KRHTS8541299000
CNHTS8541290000
RoHS Details
Qg - Gate Charge137 nC
DescriptionMOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
Package / CaseTO-263-7
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
JPHTS8541290100
Maximum Operating Temperature+ 175 C
BrandInfineon Technologies
Fall Time33 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IPB160N04S4H1ATMA1
Product CategoryMOSFET
SeriesxPB160N04
SubcategoryMOSFETs
Unit Weight0.056438 oz
ManufacturerInfineon
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation167 W
Part # AliasesIPB160N04S4-H1 SP000711252
USHTS8541290095
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time22 ns