IPB120N04S402ATMA1

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051956635

描述：Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3

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商品参数

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current120 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2 V

Rds On - Drain-Source Resistance1.58 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width9.25 mm

MXHTS85412999

Height4.4 mm

QualificationAEC-Q101

Typical Turn-On Delay Time27 ns

Length10 mm

KRHTS8541299000

CNHTS8541290000

RoHS Details

Qg - Gate Charge134 nC

DescriptionMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2

Package / CaseTO-263-3

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

JPHTS8541290100

Maximum Operating Temperature+ 175 C

BrandInfineon Technologies

Fall Time30 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

SeriesXPB120N04

ImageInfineon Technologies IPB120N04S402ATMA1

Product CategoryMOSFET

Unit Weight0.067021 oz

SubcategoryMOSFETs

ManufacturerInfineon

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation158 W

Part # AliasesIPB120N04S4-02 SP000764726

USHTS8541290095

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time16 ns