参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current180 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.7 V
Rds On - Drain-Source Resistance2.6 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time146 ns
Vgs - Gate-Source Voltage- 16 V, + 5 V
Typical Turn-On Delay Time32 ns
Qg - Gate Charge220 nC
Factory Pack Quantity1000
Package / CasePG-TO-263-7
Mounting StyleSMD/SMT
Channel ModeEnhancement
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
Fall Time119 ns
ImageInfineon Technologies IPB180P04P4L02ATMA2
BrandInfineon Technologies
Product TypeMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFET_(20V 40V)
Pd - Power Dissipation150 W
Part # AliasesIPB180P04P4L-02 SP002319828
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time28 ns