参数项参数值
参数项参数值
DC Current Gain hFE Max630 at 100 mA, 1 V
Gain Bandwidth Product fT210 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current800 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min100 at 100 mA, 1 V
MXHTS85419099
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
SeriesBC337
Factory Pack Quantity2500
Minimum Operating Temperature- 65 C
Package / CaseTO-92-3
CNHTS8541210000
PackagingBulk
Unit Weight0.016000 oz
TARIC8541900000
RoHS Details
Pd - Power Dissipation625 mW
ImageCentral Semiconductor BC337 PBFREE
USHTS8541210075
DescriptionBipolar Transistors - BJT NPN SS Aud Amp
BrandCentral Semiconductor
ManufacturerCentral Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors