参数项参数值
参数项参数值
DC Current Gain hFE Max630
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.8 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
Width3.93 mm
Mounting StyleThrough Hole
Height4.7 mm
Length4.7 mm
Maximum Operating Temperature+ 150 C
JPHTS8541210101
MXHTS85412101
BrandON Semiconductor / Fairchild
KRHTS8541219000
Minimum Operating Temperature- 55 C
Package / CaseTO-92-3
CAHTS8541210000
CNHTS8541210000
PackagingBulk
TARIC8541210000
Unit Weight0.007055 oz
Pd - Power Dissipation625 mW
RoHS Details
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN 45V 800mA HFE/400
ImageON Semiconductor / Fairchild BC33725BU
SeriesBC337
Part # AliasesBC33725BU_NL
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor