参数项参数值
参数项参数值
Forward Transconductance - Min18 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Length10 mm
Height4.4 mm
Typical Turn-On Delay Time24 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance21 mOhms
RoHS Details
Transistor Type1 P-Channel
Typical Turn-Off Delay Time56 ns
Factory Pack Quantity1000
Package / CaseTO-263-3
ImageInfineon Technologies SPB80P06PGATMA1
BrandInfineon Technologies
Width9.25 mm
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerInfineon
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET P-Ch -60V 80A D2PAK-2
Qg - Gate Charge173 nC
MXHTS85412999
Product TypeMOSFET
SeriesXPB80P06
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.068654 oz
Fall Time30 ns
CNHTS8541290000
Part # AliasesSPB80P06P G SP000096088
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time18 ns
Moisture Sensitivity Level1 (Unlimited)