SPB80P06P G

SPB80P06P G

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000051961389

描述：MOSFET P-CH 60V 80A TO-263

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min18 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current80 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Length10 mm

Height4.4 mm

Typical Turn-On Delay Time24 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

RoHS Details

Rds On - Drain-Source Resistance23 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time56 ns

Factory Pack Quantity1000

Package / CaseTO-263-3

ImageInfineon Technologies SPB80P06P G

BrandInfineon Technologies

Width9.25 mm

TARIC8541290000

Mounting StyleSMD/SMT

ManufacturerInfineon

Maximum Operating Temperature+ 175 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET P-Ch -60V 80A D2PAK-2

Qg - Gate Charge115 nC

MXHTS85412999

Product TypeMOSFET

SeriesSPB80P06

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.139332 oz

Fall Time30 ns

CNHTS8541290000

Part # AliasesSPB8P6PGXT SP000096088 SPB80P06PGATMA1

TradenameSIPMOS

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time18 ns