参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width1.3 mm
Collector-Emitter Saturation Voltage- 0.65 V
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NSS30100LT1G
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
SeriesNSS30100LT1G
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000282 oz
USHTS8541210095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 2A 30V Low VCEsat
Pd - Power Dissipation310 mW