参数项参数值
参数项参数值
Forward Transconductance - Min37 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13.4 ns
Rds On - Drain-Source Resistance78 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25.4 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge25 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time14.8 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRFR4620TRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation144 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 24A 78mOhm 25nC Qg
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time22.4 ns
Moisture Sensitivity Level1 (Unlimited)