参数项参数值
参数项参数值
Forward Transconductance - Min2 S, 1 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance330 mOhms
Transistor Type1 P-Channel
Width3.7 mm
Height1.7 mm
Length6.7 mm
MXHTS85412101
Qg - Gate Charge10 nC
KRHTS8541299000
Package / CaseSOT-223-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 65 C
CAHTS8541210000
ProductMOSFET Small Signal
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.008818 oz
RoHS Details
Pd - Power Dissipation5 W
Part # Aliases934033450115
ImageNexperia BSP250,115
BrandNexperia
Factory Pack Quantity1000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerNexperia
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
USHTS8541290095
DescriptionMOSFET TAPE-7 MOSFET