参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance80 mOhms
MXHTS85412101
Qg - Gate Charge42 nC
KRHTS8541299000
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
Unit Weight0.017870 oz
ImageVishay Semiconductors SI7450DP-T1-E3
SeriesSI7
BrandVishay Semiconductors
Pd - Power Dissipation5.2 W
Factory Pack Quantity3000
Part # AliasesSI7450DP-E3
Product TypeMOSFET
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET RECOMMENDED ALT 781-SI7450DP
USHTS8541290095
TradenameTrenchFET
Number of Channels1 Channel