参数项参数值
参数项参数值
ConfigurationSingle
QualificationAEC-Q101
Forward Transconductance - Min5.5 S
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current2.3 A
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.5 V
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541290100
Product CategoryMOSFET
DescriptionMOSFET 60V 2.3A 2watt AEC-Q101 Qualified
Package / CaseSOT-23-3
ManufacturerVishay
ImageVishay / Siliconix SQ2308CES-T1_GE3
CAHTS8541290000
Typical Turn-On Delay Time4 ns
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
Maximum Operating Temperature+ 175 C
USHTS8541290095
BrandVishay / Siliconix
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Factory Pack Quantity3000
Qg - Gate Charge5.3 nC
SeriesSQ
TradenameTrenchFET
Product TypeMOSFET
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.000282 oz
CNHTS8541290000
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)