参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Width5.31 mm
Collector-Emitter Saturation Voltage1.85 V
Height20.7 mm
Length15.87 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 40 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingTube
SubcategoryIGBTs
ImageInfineon Technologies IKW50N60H3FKSA1
BrandInfineon Technologies
Product TypeIGBT Transistors
ManufacturerInfineon
SeriesHighSpeed 3
USHTS8541290095
Unit Weight0.156264 oz
Factory Pack Quantity240
Product CategoryIGBT Transistors
Continuous Collector Current at 25 C100 A
DescriptionIGBT Transistors HIGH SPEED SWITCHING
Part # AliasesIKW50N60H3 SP000852244
Pd - Power Dissipation333 W
TradenameTRENCHSTOP