商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max180 at 1 mA, 6 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
MXHTS85412999
DC Collector/Base Gain hfe Min180
Width0.8 mm
Height0.5 mm
Length1.2 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseVMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Series2SC5658
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SC5658T2LR
Unit Weight0.000722 oz
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 50V 150MA
